Datasheets - Gate Drivers Efficient Power Conversion
Subsection: "Gate Drivers"
Manufacturer: "Efficient Power Conversion"
Manufacturers
Analog Devices Diodes Efficient Power Conversion GaNPower International Infineon International Rectifier IXYS Linear Technology Microchip Renesas STMicroelectronics Texas Instruments TRINAMICSearch results: 6 Output: 1-6
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100 V, 65 A ePower Chipset Pairs with EPC2302 to form a Power Stage up to 65 A Integrated Half Bridge Driver, Level Shift, Bootstrap, and High Side FET Power Stage Load Current (1 MHz), 65 A Maximum Input Voltage, 100 V- 80 V, 12.5 A ePower Stage Rated Output Current (1 MHZ)(1), 12.5 A Operating PWM Frequency Range(2), 3 MHz Operating Input Voltage Range, 60 V Bias Supply Voltage, 12 V Output Current and PWM Frequency Ratings are functions of Operating Conditions
- 80 V Enhancement-Mode GaN Power Transistor Half Bridge
- 60 V Enhancement-Mode GaN Power Transistor Half Bridge
Dual 150 V, 5 A Integrated Gate Drivers eGaN IC
200 V, 10 A Integrated Gate Driver eGaN IC
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