Datasheets - MOSFET Single Transistors Microchip - 3

Subsection: "MOSFET Single Transistors"
Manufacturer: "Microchip"
Search results: 51 Output: 41-51

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  1. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  2. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  1. The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package
  2. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  3. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  4. The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT)
  5. The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT)
  6. The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT)
  7. HT0440 is a dual, high voltage, isolated MOSFET driver utilizing proprietary HVCMOSВ® technology
  8. 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process
  9. 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process

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