Datasheets - Schottky Diodes & Rectifiers - 6
Subsection: "Schottky Diodes & Rectifiers"
Manufacturers
Avago Technologies Broadcom Central Semiconductor Cree Diodes Fairchild International Rectifier Kyocera Littelfuse MCC Microsemi Multicomp Nanjing International Group Nexperia NXP ON Semiconductor Panasonic PanJit Rohm STMicroelectronics Taiwan Semiconductor Texas Instruments Thinki Semiconductor Toshiba Vishay WEJ Won-Top ElectronicsSearch results: 943 Output: 101-120
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- Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
- Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
- Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
- Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
- High Performance Schottky Rectifier, 15 A The VS-15TQ060.. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction ...
- Schottky Barrier Diodes for General Purpose Applications
- Schottky Barrier Diodes for General Purpose Applications
- Schottky Barrier Diodes for General Purpose Applications
- Schottky Barrier Diodes for General Purpose Applications
- Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
- Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
- Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
- Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
- 1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...
- 1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...
