International Rectifier, IR® introduced the IRGP50B60PD, a 600V non-punch-through (NPT) insulated gate bipolar transistor (IGBT) co-packaged (Co-Pack) with an enhanced 25A HEXFRED® diode capable of operating at switching speeds up to 150kHz.
The IRGP50B60PD expands the WARP2TM product line-up of high frequency IGBT/HEXFRED diode Co-Pack devices. The new device has been enhanced with a new, higher current HEXFRED diode designed to handle high reverse current conditions. In addition, the new Co-Pack device features high efficiency performance for high current (1kW to 12kW), high frequency switch-mode power supply (SMPS) circuits in telecom and server systems. Applications include power factor correction (PFC) and full bridge primary switching, high power UPS, welding and industrial switching applications.
The new WARP2 IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and fast turn-off. In addition, negligible turn-off tail current and low turn-off switching loss, or EOFF, enables designers to achieve higher operating frequencies.
The improvements in switching performance, combined with optimized (positive) thermal coefficient characteristics and the lower gate turn-on charge, enables higher current density. Positive temperature coefficient ensures safe, reliable, high efficiency current sharing when operated in parallel.
|Part Number||VCES||Package||IC @ 25@°C(FET equiv.)(A)||IC@ 25°C(A)||IC@ 100°C(A)||Diode IFmax @ 25°C(A)||Diode IFmax @ 100°C(A)||VCE(ON)typ @ 25°C(V)|
Availability and Pricing
The new IRGP50B60PD and the IRGP50B60PDPbF (lead-free) IGBTs are available immediately. Pricing is US $4.15 each in 10,000-unit quantities. Prices are subject to change.