Fujitsu Limited announced the availability of its 2 Megabit (Mbit) FRAM memory chips, the largest capacity FRAM in volume production in the world. The two FRAM memory products, MB85R2001 and MB85R2002, have the characteristics of FRAM which is a non-volatile memory that features high-speed data writing, low power consumption, and which can endure a high number of write cycles.
In recent years, in electronic equipment such as car navigation systems, multi-function printers, and measuring instruments, non-volatile memory is being used to store various parameters, record operating conditions of equipment, as well as store security information. FRAM is ideal for such applications, as compared to E2PROM(4) it can endure a high number of write cycles, and has low power consumption as well as high-speed data writing. In accordance with advancement of higher functionalities of these types of equipment, demand is increasing for FRAM that features higher memory capacity.
As a pioneer in the field, Fujitsu started volume production of FRAM products in 1999, and has reached worldwide sales of approximately 500 million chips, including discrete memory chips and chips with embedded FRAM memory. In order to meet demand for increased FRAM memory capacity, Fujitsu doubled the memory capacity from previous products and brought the MB85R2001 and MB85R2002 products to market as early as possible. These 2 Mbit FRAM products are the largest capacity FRAM products at volume production level in the world.
Compared to conventional battery-backup SRAMs, using these new FRAM products from Fujitsu make it unnecessary to rely on a battery for data retention, while also enabling simplification of production processes and maintenance tasks, and reduction of material waste, thereby alleviating the environmental burden.
|Bit Configuration||256 Kwords x 8 bits||128 Kwords x 16 bits|
|Power Supply Voltage||3.0~3.6V|
|Operating Temperature Range||-20°C ~ +85°C|
|Read Access Time||100 ns|
|Read Cycle Time
Write Cycle Time
|Data Retention Period||over 10 years|
|Write Cycle endurance||over 1010 (10 billion cycles)|
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