Optimal power efficiency using the latest technology sets a new industry standard for high power density applications
Alpha and Omega Semiconductor introduced the AONX38168, which utilizes the latest 25 V N-Channel MOSFET Technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, (5 mm × 6 mm outline) ideal for synchronous DC/DC converter applications.
The AONX38168 is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. The new device offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets. The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (RDS(ON) × QG). The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI.
|Transistors connection to package terminals.|
The AONX38168 is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $1.7.
|RDS(ON) (mΩ max)
at VGS =
|10 V||4.5 V|
|AONX38168||DFN 5×6||High Side (Q1)||25||12||3.3||5||1150||460||40|
|Low Side (Q2)||25||12||0.8||1.05||4520||1270||170|
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