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News: Discretes

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  1. Additional U-MOS IX-H devices offer lowest-in-class on-resistance Toshiba Electronics Europe has started to ship two new 100 V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are ideally suited to power supply ...
    Discretes · Power » Toshiba » TPH3R70APL, TPN1200APL
    07-02-2018
  2. Diode combines up to 30 kV protection with small footprint Toshiba Electronics Europe has introduced a new bi-directional electrostatic discharge (ESD) protection diode DF2B7ASL which is mainly targeting interface protection in applications with ...
    Discretes · Interfaces » Toshiba » DF2B7ASL
    18-01-2018
  3. Ideal for applications that demand improved reliability and thermal management Littelfuse introduced four new series of 1200 V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May 2017. The ...
    Discretes · Power » Littelfuse » LSIC2SD120A08, LSIC2SD120A15, LSIC2SD120A20, LSIC2SD120C08
    16-01-2018
  4. Device Features Maximum On-Resistance of 0.58 mΩ at 10 V and Low Gate Charge of 61 nC in Compact PowerPAK® SO-8 Single Package Vishay Intertechnology introduced a new 25 V n-channel TrenchFET® Gen IV power MOSFET that features the ...
    Discretes · Supply · Power » Vishay » SiRA20DP
    27-11-2017
  5. N-channel U-MOS-IX-H MOSFET with integrated SRD is ideal for power supplies and motor drives Toshiba Electronics Europe has expanded its line-up of MOSFETs based on its latest generation U-MOS-IX-H trench semiconductor process with a new, ...
    Discretes » Toshiba » TPH1R204PB
    21-11-2017
  6. Robust, versatile solution for USB PD load switch applications with extended input voltage range Alpha and Omega Semiconductor (AOS) introduced AONR21357, the initial product in this P-Channel family. The new AONR21357 uses the improved P-Channel ...
    Discretes · Power » Alpha & Omega » AONR21357
    24-10-2017
  7. 40 V and 60 V U-MOS-IX-H series in DPAK package offer extremely low R DS(ON) down to 3.1 mΩ Toshiba Electronics Europe has announced new 40 V and 60 V power MOSFETs based on the company’s latest generation U-MOS-IX-H trench ...
    Discretes · Power » Toshiba » TK3R1P04PL, TK4R4P06PL, TK6R7P06PL
    23-10-2017
  8. Combines ultra-low switching losses, high efficiency and superior robustness, even at high temperatures Littelfuse , Inc. introduced its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power ...
    Discretes · Power » Littelfuse » LSIC1MO120E0080
    04-10-2017
  9. 20 A, 35 A, and 40 A Devices Feature Low 1.3 mm Profile and Forward Voltage Drop Down to 0.44 V Vishay Intertechnology introduced a new family of surface-mount TMBS® Trench MOS Barrier Schottky rectifiers in the eSMP ® series SlimDPAK ...
    Discretes · Power » Vishay » eSMP
    03-10-2017
  10. Bourns , Inc. announced a new series of bridge rectifier diode products designed for converting alternating current (AC) to direct current (DC) in power applications. Designated Bourns® Model CDTO269-BR1xL , this new series of surface mount ...
    Discretes » Bourns » CDTO269-BR1xL
    19-09-2017
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