News & Press Releases Memory - 4

Subsection: "Memory"
Search results: 102 Output: 31-40
  1. New High-Capacity Triple-Level-Cell (TLC) NAND Provides Efficient, High-Performance Storage: Offers a focused balance in cost, capacity and performance. Enables the same capacity as MLC NAND with a 28% savings in die area. Targeted for use in ...
    02-06-2015
  2. New F-RAM™ Expands the Density Range of the Most Energy-Efficient Nonvolatile RAMs for Mission-Critical Data Storage Cypress Semiconductor introduced a family of 4 Mb serial Ferroelectric Random Access Memories (F-RAMs™), which are the ...
    06-05-2015
  1. CBRAM resistive memory enables radically low energy consumption, setting standard for a new generation of memory for the Era of Things Adesto Technologies, the inventor and market leader of the world’s lowest power memory solutions, announced ...
    15-01-2015
  2. Memory Fujitsu MB85RC1MT
    Fujitsu Semiconductor developed of a new FRAM product, the MB85RC1MT , with 1 Mbit of memory, the highest memory density of our products with an I 2 C serial interface. The new product is guaranteed for up to 10 trillion read/write cycles, and is ...
    11-03-2014
  3. Fujitsu Semiconductor Limited announced the development of the MB85R4M2T , a 4 Mbit FRAM chip with an SRAM-compatible parallel interface. The new product will be made available in sample quantities starting January 2014. It uses a 44-pin TSOP ...
    19-11-2013
  4. A new material built from aluminum and antimony shows promise for next-generation data-storage devices A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building ...
    21-09-2013
  5. Memory Samsung K90KGY8S7M-CCK0
    Using 10nm-class process technology. Samsung Electronics has begun mass producing a 128, 3-bit MLC NAND memory chip using 10 nm-class process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded ...
    17-04-2013
  6. EPFL scientists have combined two materials with advantageous electronic properties -- graphene and molybdenite -- into a flash memory prototype that is very promising in terms of performance, size and energy consumption. The molybdenite flash ...
    26-03-2013
  7. Memory Microchip SST25PF020B SST25PF040B SST25PF080B
    New Flash Devices Include Extended Operating Voltage Range From 2.3 to 3.6V. Microchip Technology announced an expansion of its SPI Flash memory portfolio, with the introduction of the SST25PF020B , SST25PF040B and SST25PF080B devices. The ...
    12-02-2013
  8. Memory Computers & Peripherals Kingston DTHX30/512GB DTHX30/1T
    DataTraveler HyperX Predator 3.0 will be Available Up to 1TB; data Transfer Speeds up to 240MB/s Read, 160MB/s Write; certified SuperSpeed USB 3.0. Kingston Digita announced the DataTraveler HyperX Predator 3.0 USB Flash drive. DataTraveler HyperX ...
    10-01-2013
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