News & Press Releases - RF - 11

Subsection: "RF"
Search results: 241 Output: 101-110
  1. RF Wireless Infineon PTVA030121EA PTVA120251EA PTVA120501EA
    PTVA030121EA , PTVA120251EA and PTVA120501EA , the newest members of Infineon's 50 V LDMOS RF power transistor family, are designed to deliver excellent ruggedness, high efficiency and high gain. The PTVA030121EA is an unmatched transistor capable ...
    Oct 4, 2014
  2. RF Wireless Infineon PTAC240502FC
    PTAC240502FC is the latest addition to Infineon's RF LDMOS transistors for applications in the 2300-2400 MHz frequency band. This device provides two asymmetric paths (17 W+33 W) enabling high-efficiency and compact Doherty amplifier designs. With ...
    Oct 2, 2014
  1. Designers building Bluetooth Smart® devices or modules can accelerate project completion, maximize system performance, and minimize solution size using STMicroelectronics ’ new integrated balun, the BALF-NRG-01D3 . As a companion chip to ...
    Oct 1, 2014
  2. RF Wireless IDT IDTF1650
    IDT’s Latest RF Signal Path Solution Features Zero-Distortion™ Technology to Deliver Industry’s Lowest Power Consumption Modulator Integrated Device Technology introduced a new IQ modulator that delivers the industry’s ...
    Jul 29, 2014
  3. Analog Devices , Inc. announced a low-power radio transceiver featuring a set of configuration profiles that allow radio performance optimization, reducing system development time and shortening time-to-market by months. The ADF7024 transceiver is ...
    Jun 26, 2014
  4. Mini-Circuits’ new TSS-53LNB+ ultra-wideband, low noise bypass amplifier achieves a new level of performance to meet your MMIC amplifier needs for applications from commercial wireless and instrumentation to military and more! This ...
    Jun 12, 2014
  5. RF Discretes NXP LDMOS RF BLC9G27LS-150 AV
    NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...
    Jun 8, 2014
  6. RF Infineon PTFC260202FC PTAC260302FC PTFC261402FC PTFC262157FH PTFC262808FV
    Infineon has launched a new line of 2.6 GHz LDMOS transistors that support LTE applications. The new transistors offer excellent gain, high efficiency and high peak power. They cover a wide range of output powers from 25 W to 280 W and are ...
    Jun 1, 2014
  7. RF Mini-Circuits VNA-28A+
    Mini-Circuits MMIC amplifier line continues to grow with the release of the VNA-28A+ high-directivity MMIC amplifier. This model covers 500 2500 MHz with 18 dB typical directivity, making it suitable as a low cost isolator to minimize the ...
    May 4, 2014
  8. RF Infineon PTVA104501EH
    Infineon's new PTVA104501EH LDMOS transistor is designed to provide 450 W output power across the 960-1215 MHz avionics frequency band (measured with 128 µsec, 10% DC pulse). It offers high gain of 17 dB and 57% efficiency. PTVA104501EH is ...
    Apr 16, 2014