News & Press Releases - RF - 11
Subsection: "RF"
Search results: 241 Output: 101-110
- PTVA030121EA , PTVA120251EA and PTVA120501EA , the newest members of Infineon's 50 V LDMOS RF power transistor family, are designed to deliver excellent ruggedness, high efficiency and high gain. The PTVA030121EA is an unmatched transistor capable ...Oct 4, 2014
- PTAC240502FC is the latest addition to Infineon's RF LDMOS transistors for applications in the 2300-2400 MHz frequency band. This device provides two asymmetric paths (17 W+33 W) enabling high-efficiency and compact Doherty amplifier designs. With ...Oct 2, 2014
- Designers building Bluetooth Smart® devices or modules can accelerate project completion, maximize system performance, and minimize solution size using STMicroelectronics ’ new integrated balun, the BALF-NRG-01D3 . As a companion chip to ...Oct 1, 2014
- IDT’s Latest RF Signal Path Solution Features Zero-Distortion™ Technology to Deliver Industry’s Lowest Power Consumption Modulator Integrated Device Technology introduced a new IQ modulator that delivers the industry’s ...Jul 29, 2014
- Analog Devices , Inc. announced a low-power radio transceiver featuring a set of configuration profiles that allow radio performance optimization, reducing system development time and shortening time-to-market by months. The ADF7024 transceiver is ...Jun 26, 2014
- Mini-Circuits’ new TSS-53LNB+ ultra-wideband, low noise bypass amplifier achieves a new level of performance to meet your MMIC amplifier needs for applications from commercial wireless and instrumentation to military and more! This ...Jun 12, 2014
- NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...Jun 8, 2014
- Infineon has launched a new line of 2.6 GHz LDMOS transistors that support LTE applications. The new transistors offer excellent gain, high efficiency and high peak power. They cover a wide range of output powers from 25 W to 280 W and are ...Jun 1, 2014
- RF Mini-Circuits VNA-28A+Mini-Circuits MMIC amplifier line continues to grow with the release of the VNA-28A+ high-directivity MMIC amplifier. This model covers 500 2500 MHz with 18 dB typical directivity, making it suitable as a low cost isolator to minimize the ...May 4, 2014
- Infineon's new PTVA104501EH LDMOS transistor is designed to provide 450 W output power across the 960-1215 MHz avionics frequency band (measured with 128 µsec, 10% DC pulse). It offers high gain of 17 dB and 57% efficiency. PTVA104501EH is ...Apr 16, 2014
