News & Press Releases Power - 3

Subsection: "Power"
Search results: 974 Output: 21-30
  1. Infineon Technologies has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS™ Maxi IPM IM828 series is the industry’s first ...
    10-12-2020
  2. Discretes Power Vishay SiHH070N60EF
    Fourth-Generation N-Channel Device Lowers Conduction and Switching Losses, Increases Efficiency Vishay Intertechnology introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing high efficiency for ...
    07-12-2020
  1. RF Discretes Power Ampleon BLP2425M10S250P
    Ampleon announced the BLP2425M10S250P , a 250 W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400 MHz to 2500 MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, ...
    30-11-2020
  2. EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification. Efficient ...
    22-11-2020
  3. Discretes Power Infineon IQE013N04LM6 IQE013N04LM6CG
    Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies tackles this challenge by focusing on system innovation with enhancements on the component level. ...
    02-11-2020
  4. Device offers significantly reduced losses thereby increasing power solution efficiency Toshiba Electronics Europe has launched a 1200 V silicon carbide (SiC) MOSFET for high power industrial applications including 400 V AC input AC-DC power ...
    27-10-2020
  5. The PA22 from Apex Microtechnology establishes a new benchmark in power amplifier performance for a variety of applications where high speed and short-term power dissipation is a must. With this device, designers are offered exceptional power ...
    15-09-2020
  6. Discretes Power EPC EPC2215 EPC2207
    These new generation 200 V eGaN® FETs are ideal for 48 V OUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters EPC advances the performance capability while lowering the ...
    14-09-2020
  7. Alpha and Omega Semiconductor announced the release of, AONS32310 , a 30 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability which is ideally suited for demanding applications such as hot swap and e-fuse. A high SOA is ...
    08-09-2020
  8. Electronic components Power Navitas NV6123 NV6125 NV6127
    New GaNFast Power ICs with Integrated Cooling Pad Enable Even Faster Charging in Smaller Sizes Navitas Semiconductor announced a new range of 650 V-rated GaNFast power ICs in 6 × 8 mm PQFN packaging with a proprietary, integrated cooling pad ...
    15-07-2020
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