All Sections - 11

Search results: 296,808 Output: 101-110
  1. Triac Driver Output Optocoupler, 6-Pin DIP 250V Zero Crossing The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing ...
    02-04-2024
  2. Triac Driver Output Optocoupler, 6-Pin DIP 250V Zero Crossing The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing ...
    02-04-2024
  1. Triac Driver Output Optocoupler, 6-Pin DIP 250V Zero Crossing The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing ...
    02-04-2024
  2. Triac Driver Output Optocoupler, 6-Pin DIP 250V Zero Crossing The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing ...
    02-04-2024
  3. This design for a photonic switch needs more than approximately 70 V at the cathode of a duo-lateral optical position-sensing device. This voltage gets speedy response at longer wavelengths, such as 980 nm. The circuit uses fast transimpedance ...
    01-04-2024
  4. In developing electronic systems, designers look for products or ideas that may benefit from the better performance, smaller size, lower cost, and improved reliability that an IC can offer. Toward that end, the digital potentiometer emerged as an ...
    29-03-2024
  5. A previous Design Idea [ 1 ] outlined a relatively simple circuit in which a momentary pushbutton could be made to function like a latching, mechanical switch. The article generated a good deal of reader feedback. Amongst other comments, readers ...
    28-03-2024
  6. Datasheets Vishay SiHFU9310-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  7. Datasheets Vishay SiHFR9310TR-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  8. Datasheets Vishay SiHFR9310TRR-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
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