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  1. In developing electronic systems, designers look for products or ideas that may benefit from the better performance, smaller size, lower cost, and improved reliability that an IC can offer. Toward that end, the digital potentiometer emerged as an ...
    29-03-2024
  2. Datasheets Vishay SiHFU9310-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  1. Datasheets Vishay SiHFR9310-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  2. Datasheets Vishay SiHFR9310TRL-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  3. Datasheets Vishay SiHFR9310TR-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  4. Datasheets Vishay SiHFR9310TRR-GE3
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  5. Datasheets Vishay IRFU9310PbF
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  6. Datasheets Vishay IRFR9310TRLPbF
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  7. Datasheets Vishay IRFR9310TRPbF
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
  8. Datasheets Vishay IRFR9310TRRPbF
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
    28-03-2024
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