All Sections - 4

Miniature Relay 2 Poles-1 to 2 A for Signal Switching

650V N-Channel MOSFET in TO247-4 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...

650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...

650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...

800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...

800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...

800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...

BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC in 32-VQFN (5x5) package

BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC in 32-VQFN (5x5) package

Phase input interface design improves noise immunity to prevent step-out, enabling stable and reliable control in demanding industrial environments Toshiba Electronics Europe announces the launch of the TB67S531FTG , a constant-current, two-phase ...