Datasheet MBR150G - ON Semiconductor SCHOTTKY DIODE, 1 A FORWARD

ON Semiconductor MBR150G

Part Number: MBR150G

Detailed Description

Manufacturer: ON Semiconductor

Description: SCHOTTKY DIODE, 1 A FORWARD

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Docket:
MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode.

State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features

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Specifications:

  • Current Ifsm: 25 A
  • Diode Type: Schottky
  • Forward Current If(AV): 1 A
  • Forward Surge Current Ifsm Max: 25 A
  • Forward Voltage VF Max: 750 mV
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: Axial Leaded
  • Number of Pins: 2
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: Axial Leaded
  • Repetitive Reverse Voltage Vrrm Max: 50 V
  • SVHC: No SVHC (15-Dec-2010)

RoHS: Yes

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