Datasheet BUP213 - Infineon IGBT, TO-220

Detailed Description

Manufacturer: Infineon

Description: IGBT, TO-220

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Docket:
Infineon
IGBT Preliminary data · Low forward voltage drop · High switching speed · Low tail current · Latch-up free · Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Pin 2 C
BUP 213
Pin 3 E
VCE

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 32 A
• Max Voltage Vce Sat: 2.7 V
• Max Power Dissipation: 200 W
• Collector-to-Emitter Breakdown Voltage: 1200 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-220AB
• Number of Pins: 3
• SVHC: Cobalt dichloride (18-Jun-2010)
• Case Style: TO-220AB
• Current Temperature: 25°C
• Device Marking: BUP213
• Fall Time Tf: 95 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 32 A
• Max Power Dissipation Ptot: 200 W
• Number of Transistors: 1
• Pin Format: GCE
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Pulsed Current Icm: 64 A
• Rise Time: 70 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 1200 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5
• Multicomp - MK3306