Datasheet IKB20N60T - Infineon IGBT+ DIODE,600V,20A,TO263

Detailed Description

Manufacturer: Infineon

Description: IGBT+ DIODE,600V,20A,TO263

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Docket:
TrenchStop® Series
IKB20N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time ­ 5µs Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 20A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking K20T60 Package PG-TO263-3-2
C

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 20 A
• Collector Emitter Voltage Vces: 2.05 V
• Power Dissipation Max: 166 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-263
• Number of Pins: 3

RoHS: Yes