Datasheet SKM50GB123D - Semikron IGBT MODULE, DUAL

Detailed Description

Manufacturer: Semikron

Description: IGBT MODULE, DUAL

Download Data Sheet

Docket:
Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 k Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min.

DIN 40 040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C
Values
... 123 D 1200 1200 50 / 40 100 / 80 ± 20 310 ­ 40 . . .+150 (125) 2 500 Class F 40/125/56 50 / 40 100 / 80 550 1500 Units V V A A V W °C V
SEMITRANS® M IGBT Modules SKM 50 GB 123 D SKM 50 GAL 123 D

Specifications:

• Av Current Ic: 50 A
• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.8 V
• Current Ic Continuous a Max: 50 A
• Current Ic Continuous b Max: 40 A
• Current Temperature: 25°C
• DC Collector Current: 50 A
• External Depth: 34 mm
• External Length / Height: 29.5 mm
• External Width: 94 mm
• Fixing Centres: 80 mm
• Fixing Hole Diameter: 6.4 mm
• Mounting Type: Screw
• Number of Transistors: 2
• Operating Temperature Range: -40°C to +150°C
• Package / Case: SEMITRANS 2
• Power Dissipation Max: 310 W
• Power Dissipation Pd: 400 W
• Power Dissipation Ptot Max: 400 W
• Power Dissipation: 310 W
• Pulsed Current Icm: 100 A
• Rise Time: 60 ns
• Transistor Case Style: SEMITRANS 2
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2 kV

RoHS: Yes