Datasheet DIM200WHS17-A000 - Dynex IGBT, HALF-BRIDGE 200 A 1700 V

Detailed Description

Manufacturer: Dynex

Description: IGBT, HALF-BRIDGE 200 A 1700 V

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Docket:
DIM200WHS17-A000
DIM200WHS17-A000
Half Bridge IGBT Module
Replaces issue December 2003, version FDS5673-2.3 FDS5673-3.0 January 2004
FEATURES

Specifications:

• Collector Emitter Voltage Vces: 3.4 V
• Current Ic @ Vce Sat: 200 A
• Current Ic Continuous a Max: 200 A
• Current Temperature: 65°C
• Fall Time tf: 300 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 2
• Package / Case: W
• Power Dissipation Pd: 1.39 kW
• Power Dissipation: 1.39 kW
• Pulsed Current Icm: 400 A
• Rise Time: 90 ns
• Transistor Polarity: N Channel
• Voltage Vces: 1700 V

RoHS: Yes

Other Names:

DIM200WHS17A000, DIM200WHS17 A000