Datasheet BST62,115 - NXP TRANSISTOR DARL PNP SOT89

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR DARL PNP SOT89

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST60; BST61; BST62 PNP Darlington transistors

Specifications:

• Collector Emitter Voltage V(br)ceo: -80 V
• Collector Emitter Voltage Vces: -1.3 V
• Current Ic Continuous a Max: -500 mA
• DC Collector Current: -1 A
• DC Current Gain Min: 2000
• DC Current Gain: 2000
• Gain Bandwidth ft Typ: 200 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-89
• Power Dissipation Pd: 1.3 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-89
• Transistor Polarity: PNP
• Transistor Type: Darlington

RoHS: Yes

Other Names:

BST62115, BST62 115