Datasheet 2N5885G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 60 V TO-204

ON Semiconductor 2N5885G

Part Number: 2N5885G

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 60 V TO-204

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Docket:
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon High-Power Transistors
Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications.
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Specifications:

  • Collector Emitter Voltage V(br)ceo: 60 V
  • DC Collector Current: 50 A
  • DC Current Gain Max (hfe): 4
  • Power Dissipation Pd: 200 W
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: 4 MHz

RoHS: Yes

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