Datasheet VP0550 (Supertex) - 2

VP0550 Thermal Characteristics Package I I D D Power Dissipation † I (continuous)† (pulsed) @T = 25OC IDR DRM C
TO-92 -54mA -250mA 1.0W -54mA -250mA
Notes:
† I (continuous) is limited by max rated T . D j
Electrical Characteristics
(T = 25°C unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-source breakdown voltage -500 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -2.0 - -4.5 V V = V , I = -1.0mA GS(th) GS DS D ΔV Change in V with temperature - 3.5 6.0 mV/OC V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - -100 nA V = ±20V, V = 0V GSS GS DS - - -10 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current µA DSS - - -1000 V = 0.8 Max Rating, DS V = 0V, T = 125OC GS A - -90 - V = -5.0V, V = -25V I On-state drain current mA GS DS D(ON) -100 -240 - V = -10V, V = -25V GS DS - 85 - V = -5.0V, I = -5mA R Static drain-to-source on-state resis- Ω GS D DS(ON) tance - 80 125 V = -10V, I = -10mA GS D ΔR Change in R with temperature - 0.85 - %/OC V = -10V, I = -10mA DS(ON) DS(ON) GS D G Forward transconductance 25 40 - mmho V = -25V, I = -10mA FS DS D C Input capacitance - 40 70 ISS V = 0V, GS C Common source output capacitance - 10 20 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 10 RSS t Turn-on delay time - 5.0 10 d(ON) V = -25V, t Rise time - 8.0 10 DD r ns I = -100mA, D t Turn-off delay time - 8.0 15 d(OFF) R = 25Ω GEN t Fall time - 5.0 16 f V Diode forward voltage drop - -0.8 -1.5 V V = 0V, I = -0.1A SD GS SD t Reverse recovery time - 200 - ns V = 0V, I = -0.1A rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
10%
Pulse Generator INPUT -10V
90% RGEN t t (ON) (OFF)
D.U.T.
t t t t d(ON) r d(OFF) f
INPUT OUTPUT 0V
90% 90% RL
OUTPUT
10% 10%
VDD VDD
Doc.# DSFP-VP0550
Supertex inc.
C082313 2
www.supertex.com