Datasheet BC546, BC547, BC548, BC549, BC550 (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Pages / Page | 8 / 3 |
| Revision | A |
| File Format / Size | PDF / 322 Kb |
| Document Language | English |
Model Line for this Datasheet
BC550
Text Version of Document
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol
VCBO VCEO Parameter
Collector-Base Voltage Collector-Emitter Voltage Value
BC546 80 BC547 / BC550 50 BC548 / BC549 30 BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC546 / BC547 6 BC548 / BC549 / BC550 5 Unit
V V VEBO Emitter-Base Voltage IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C -65 to +150 °C TSTG Storage Temperature Range V Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 15 nA ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 2 mA VCE(sat) Collector-Emitter Saturation
Voltage IC = 10 mA, IB = 0.5 mA 90 250 IC = 100 mA, IB = 5 mA 250 600 VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 IC = 100 mA, IB = 5 mA 900 VBE(on) Base-Emitter On Voltage 110 VCE = 5 V, IC = 2 mA 580 800 660 VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 100 MHz 300 Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 NF Noise
Figure BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA,
f = 1 kHz, RG = 2 kΩ BC549 / BC550 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz BC549
BC550 mV
700
720 Current Gain Bandwidth Product fT mV mV
MHz 6.0 pF
pF 2.0 10.0 1.2 4.0 1.4 4.0 1.4 3.0 dB hFE Classification
Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 © 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 www.fairchildsemi.com
2 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol
VCBO VCEO Parameter
Collector-Base Voltage Collector-Emitter Voltage Value
BC546 80 BC547 / BC550 50 BC548 / BC549 30 BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC546 / BC547 6 BC548 / BC549 / BC550 5 Unit
V V VEBO Emitter-Base Voltage IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C -65 to +150 °C TSTG Storage Temperature Range V Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 15 nA ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 2 mA VCE(sat) Collector-Emitter Saturation
Voltage IC = 10 mA, IB = 0.5 mA 90 250 IC = 100 mA, IB = 5 mA 250 600 VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 IC = 100 mA, IB = 5 mA 900 VBE(on) Base-Emitter On Voltage 110 VCE = 5 V, IC = 2 mA 580 800 660 VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 100 MHz 300 Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 NF Noise
Figure BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA,
f = 1 kHz, RG = 2 kΩ BC549 / BC550 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz BC549
BC550 mV
700
720 Current Gain Bandwidth Product fT mV mV
MHz 6.0 pF
pF 2.0 10.0 1.2 4.0 1.4 4.0 1.4 3.0 dB hFE Classification
Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 © 2002 Fairchild Semiconductor Corporation
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 www.fairchildsemi.com
2 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
