Datasheet LT3641 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Dual Monolithic Buck Regulator with Power-On Reset and Watchdog Timer |
| Pages / Page | 28 / 3 — The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply … |
| File Format / Size | PDF / 452 Kb |
| Document Language | English |
The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply over the full operating
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LT3641
The ELECTRICAL CHARACTERISTICS
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 12V, VIN2 = 3.3V, EN/UVLO = 12V, EN2 = 3.3V, unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS
VIN Undervoltage Lockout Threshold l 3.6 4 V VIN Undervoltage Release Threshold l 3.8 4.2 V Quiescent Current from VIN EN/UVLO = 0.3V 0.1 1 μA Not Switching 275 375 μA EN/UVLO Threshold Voltage 1.2 1.26 1.3 V EN/UVLO High Bias Current EN/UVLO = Threshold + 60mV 2 μA EN/UVLO Low Bias Current EN/UVLO = Threshold – 60mV 0.1 μA SYNC Input Frequency 0.35 2.5 MHz SYNC Threshold Voltage 0.4 0.8 1 V Switching Frequency RT = 32.4k l 1.75 2 2.35 MHz RT = 182k l 450 500 550 kHz FB1 Voltage l 1.24 1.265 1.29 V FB1 Bias Current FB1 = 1.265V 30 100 nA FB1 Line Regulation 5V < VIN < 30V 0.001 %/V SW1 Minimum Off-Time 70 100 ns SW1 VCESAT ISW1 = 800mA 400 mV SW1 Leakage Current 0.1 1 μA SW1 Current Limit FB1 = 1V (Note 3) l 2.2 2.8 3.4 A FB1 = 0.1V 1.8 A DA Current limit FB1 = 1V (Note 4) l 1.35 1.7 2.2 A FB1 = 0.1V 1 A BST Pin Current ISW1 = 800mA 30 50 mA Minimum BST-SW Voltage 2 2.7 V VIN2 Minimum Operating Voltage l 2.3 2.5 V VIN2 Maximum Operating Voltage l 5.5 V EN2 Threshold Rising l 1.13 1.18 1.23 V EN2 Hysteresis 50 80 110 mV EN2 Bias Current EN2 = EN2 Threshold 50 500 nA FB2 Voltage l 585 600 615 mV FB2 Bias Current FB2 = 0.6V 0 100 nA FB2 Line Regulation 2.5V < VIN2 < 5.5V 0.01 %/V SW2 PMOS Current Limit (Note 5) l 1.5 1.9 2.2 A SW2 NMOS Current Limit (Note 5) l 1.2 1.6 2 A SW2 PMOS RDS(ON) ISW2 = 0.5A (Note 6) 275 mΩ SW2 NMOS RDS(ON) ISW2 = 0.5A (Note 6) 200 mΩ ΔFB2 to Enable PGOOD2 20 40 80 mV ΔFB2 Hysteresis to Disable PGOOD2 20 40 80 mV PGOOD2 Voltage FB2 = 0.6V, IPGOOD2 = 1mA 200 320 mV 3641fa 3
The ELECTRICAL CHARACTERISTICS
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 12V, VIN2 = 3.3V, EN/UVLO = 12V, EN2 = 3.3V, unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS
VIN Undervoltage Lockout Threshold l 3.6 4 V VIN Undervoltage Release Threshold l 3.8 4.2 V Quiescent Current from VIN EN/UVLO = 0.3V 0.1 1 μA Not Switching 275 375 μA EN/UVLO Threshold Voltage 1.2 1.26 1.3 V EN/UVLO High Bias Current EN/UVLO = Threshold + 60mV 2 μA EN/UVLO Low Bias Current EN/UVLO = Threshold – 60mV 0.1 μA SYNC Input Frequency 0.35 2.5 MHz SYNC Threshold Voltage 0.4 0.8 1 V Switching Frequency RT = 32.4k l 1.75 2 2.35 MHz RT = 182k l 450 500 550 kHz FB1 Voltage l 1.24 1.265 1.29 V FB1 Bias Current FB1 = 1.265V 30 100 nA FB1 Line Regulation 5V < VIN < 30V 0.001 %/V SW1 Minimum Off-Time 70 100 ns SW1 VCESAT ISW1 = 800mA 400 mV SW1 Leakage Current 0.1 1 μA SW1 Current Limit FB1 = 1V (Note 3) l 2.2 2.8 3.4 A FB1 = 0.1V 1.8 A DA Current limit FB1 = 1V (Note 4) l 1.35 1.7 2.2 A FB1 = 0.1V 1 A BST Pin Current ISW1 = 800mA 30 50 mA Minimum BST-SW Voltage 2 2.7 V VIN2 Minimum Operating Voltage l 2.3 2.5 V VIN2 Maximum Operating Voltage l 5.5 V EN2 Threshold Rising l 1.13 1.18 1.23 V EN2 Hysteresis 50 80 110 mV EN2 Bias Current EN2 = EN2 Threshold 50 500 nA FB2 Voltage l 585 600 615 mV FB2 Bias Current FB2 = 0.6V 0 100 nA FB2 Line Regulation 2.5V < VIN2 < 5.5V 0.01 %/V SW2 PMOS Current Limit (Note 5) l 1.5 1.9 2.2 A SW2 NMOS Current Limit (Note 5) l 1.2 1.6 2 A SW2 PMOS RDS(ON) ISW2 = 0.5A (Note 6) 275 mΩ SW2 NMOS RDS(ON) ISW2 = 0.5A (Note 6) 200 mΩ ΔFB2 to Enable PGOOD2 20 40 80 mV ΔFB2 Hysteresis to Disable PGOOD2 20 40 80 mV PGOOD2 Voltage FB2 = 0.6V, IPGOOD2 = 1mA 200 320 mV 3641fa 3
