Datasheet MTD20P06HDL (ON Semiconductor) - 5
| Manufacturer | ON Semiconductor |
| Description | Power MOSFET 60 V, 20 A, Logic Level, P-Channel DPAK |
| Pages / Page | 8 / 5 — MTD20P06HDL. Figure 8. Gate−To−Source and Drain−To−Source. Figure 9. … |
| Revision | 6 |
| File Format / Size | PDF / 88 Kb |
| Document Language | English |
MTD20P06HDL. Figure 8. Gate−To−Source and Drain−To−Source. Figure 9. Resistive Switching Time. Voltage versus Total Charge
Model Line for this Datasheet
Text Version of Document
MTD20P06HDL
6 50 V 1000 TS) DS QT VDD = 30 V 45 , DRAIN−T (VOL ID = 15 A 5 V 40 GS = 5.0 V TAGE TJ = 25°C tr 4 35 O−SOURCE 100 VOL tf VDS V 30 GS (ns) 3 25 td(off) Q1 Q2 t 20 I VOL t, TIME d(on) D = 15 A 2 T 10 J = 25°C 15 TAGE TE−TO−SOURCE 10 1 (VOL , GA Q3 5 GSV TS) 0 0 1 0 4 8 12 16 20 24 1 10 100 QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (Ohms)
Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode high di/dts. The diode’s negative di/dt during ta is directly are very important in systems using it as a freewheeling or controlled by the device clearing the stored charge. commutating diode. Of particular interest are the reverse However, the positive di/dt during tb is an uncontrollable recovery characteristics which play a major role in diode characteristic and is usually the culprit that induces determining switching losses, radiated noise, EMI and RFI. current ringing. Therefore, when comparing diodes, the System switching losses are largely due to the nature of ratio of tb/ta serves as a good indicator of recovery the body diode itself. The body diode is a minority carrier abruptness and thus gives a comparative estimate of device, therefore it has a finite reverse recovery time, trr, due probable noise generated. A ratio of 1 is considered ideal and to the storage of minority carrier charge, QRR, as shown in values less than 0.5 are considered snappy. the typical reverse recovery wave form of Figure 12. It is this Compared to ON Semiconductor standard cell density stored charge that, when cleared from the diode, passes low voltage MOSFETs, high cell density MOSFET diodes through a potential and defines an energy loss. Obviously, are faster (shorter trr), have less stored charge and a softer repeatedly forcing the diode through reverse recovery reverse recovery characteristic. The softness advantage of further increases switching losses. Therefore, one would the high cell density diode means they can be forced through like a diode with short trr and low QRR specifications to reverse recovery at a higher di/dt than a standard cell minimize these losses. MOSFET diode without increasing the current ringing or the The abruptness of diode reverse recovery effects the noise generated. In addition, power dissipation incurred amount of radiated noise, voltage spikes, and current from switching the diode will be less due to the shorter ringing. The mechanisms at work are finite irremovable recovery time and lower switching losses. circuit parasitic inductances and capacitances acted upon by 15 VGS = 0 V TJ = 25°C 12 (AMPS) 9 6 , SOURCE CURRENT IS 3 00.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VSD, SOURCE−TO−DRAIN VOLTAGE (Volts)
Figure 10. Diode Forward Voltage versus Current http://onsemi.com 5
6 50 V 1000 TS) DS QT VDD = 30 V 45 , DRAIN−T (VOL ID = 15 A 5 V 40 GS = 5.0 V TAGE TJ = 25°C tr 4 35 O−SOURCE 100 VOL tf VDS V 30 GS (ns) 3 25 td(off) Q1 Q2 t 20 I VOL t, TIME d(on) D = 15 A 2 T 10 J = 25°C 15 TAGE TE−TO−SOURCE 10 1 (VOL , GA Q3 5 GSV TS) 0 0 1 0 4 8 12 16 20 24 1 10 100 QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (Ohms)
Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode high di/dts. The diode’s negative di/dt during ta is directly are very important in systems using it as a freewheeling or controlled by the device clearing the stored charge. commutating diode. Of particular interest are the reverse However, the positive di/dt during tb is an uncontrollable recovery characteristics which play a major role in diode characteristic and is usually the culprit that induces determining switching losses, radiated noise, EMI and RFI. current ringing. Therefore, when comparing diodes, the System switching losses are largely due to the nature of ratio of tb/ta serves as a good indicator of recovery the body diode itself. The body diode is a minority carrier abruptness and thus gives a comparative estimate of device, therefore it has a finite reverse recovery time, trr, due probable noise generated. A ratio of 1 is considered ideal and to the storage of minority carrier charge, QRR, as shown in values less than 0.5 are considered snappy. the typical reverse recovery wave form of Figure 12. It is this Compared to ON Semiconductor standard cell density stored charge that, when cleared from the diode, passes low voltage MOSFETs, high cell density MOSFET diodes through a potential and defines an energy loss. Obviously, are faster (shorter trr), have less stored charge and a softer repeatedly forcing the diode through reverse recovery reverse recovery characteristic. The softness advantage of further increases switching losses. Therefore, one would the high cell density diode means they can be forced through like a diode with short trr and low QRR specifications to reverse recovery at a higher di/dt than a standard cell minimize these losses. MOSFET diode without increasing the current ringing or the The abruptness of diode reverse recovery effects the noise generated. In addition, power dissipation incurred amount of radiated noise, voltage spikes, and current from switching the diode will be less due to the shorter ringing. The mechanisms at work are finite irremovable recovery time and lower switching losses. circuit parasitic inductances and capacitances acted upon by 15 VGS = 0 V TJ = 25°C 12 (AMPS) 9 6 , SOURCE CURRENT IS 3 00.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VSD, SOURCE−TO−DRAIN VOLTAGE (Volts)
Figure 10. Diode Forward Voltage versus Current http://onsemi.com 5
