Datasheet BC856W, BC857W, BC858W, BC859W, BC860W (Infineon) - 4

ManufacturerInfineon
DescriptionPNP Silicon AF Transistors SOT-323
Pages / Page11 / 4 — BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. …
File Format / SizePDF / 187 Kb
Document LanguageEnglish

BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics

BC856W...BC860W Electrical Characteristics Parameter Symbol Values Unit min typ max DC Characteristics

Model Line for this Datasheet

Text Version of Document

BC856W...BC860W Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CES V IC = 10 µA, VBE = 0 BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 1 µA, IC = 0 Collector cutoff current ICBO - - 15 nA VCB = 30 V, IE = 0 Collector cutoff current ICBO - - 5 µA VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) hFE - IC = 10 µA, VCE = 5 V hFE-group
A
- 140 - hFE-group
B
- 250 - hFE-group
C
- 480 - DC current gain 1) hFE IC = 2 mA, VCE = 5 V hFE-group
A
125 180 250 hFE-group
B
220 290 475 hFE-group
C
420 520 800 Collector-emitter saturation voltage1) VCEsat mV IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 Base-emitter saturation voltage 1) VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - Base-emitter voltage 1) VBE(ON) IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 1) Pulse test: t ≤ 300µs, D = 2% 3 Jan-28-2005