link to page 17 IGLD60R190D1IGLD60R190D1 600V CoolGaN™ enhancement-mode Power TransistorFeatures Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge G Capable of reverse conduction SSK Low gate charge, low output charge SD Superior commutation ruggedness DD Qualified for industrial applications according to JEDEC D Standards (JESD47 and JESD22) 1SSSKGBenefits8 Improves system efficiency Gate 8 Drain 1,2,3,4 Improves power density Kelvin Source 7 Enables higher operating frequency Source 5,6 System cost reduction savings Reduces EMI DApplications SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, GSK high frequency LLC and flyback). For other applications: review CoolGaN™ reliability white paper and contact S Infineon regional support Table 1Key Performance Parameters at Tj = 25 °CParameterValueUnit VDS,max 600 V RDS(on),max 190 mΩ QG,typ 3.2 nC ID,pulse 23 A Qoss @ 400 V 16 nC Qrr 0 nC Table 2Ordering InformationType / Ordering CodePackageMarkingRelated links IGLD60R190D1 PG-LSON-8-1 60R190D1 see Appendix A Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0 www.infineon.com 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History