Datasheet ADA4092-4 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Micropower RRIO Operational Amplifier |
| Pages / Page | 20 / 3 — ADA4092-4. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 2. Parameter. … |
| Revision | B |
| File Format / Size | PDF / 642 Kb |
| Document Language | English |
ADA4092-4. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 2. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
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ADA4092-4 SPECIFICATIONS ELECTRICAL SPECIFICATIONS
VSY = ±1.5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V −1.5 +0.2 +1.5 mV OS −40°C ≤ T ≤ +125°C −2.5 +2.5 mV A Offset Voltage Drift ΔV /ΔT 3 µV/°C OS Input Bias Current I −60 −45 nA B −40°C ≤ T ≤ +85°C −60 +60 nA A −40°C ≤ T ≤ +125°C −275 +275 nA A Input Offset Current I −4 +1 +4 nA OS −40°C ≤ T ≤ +85°C −5 +5 nA A −40°C ≤ T ≤ +125°C −75 +75 nA A Input Voltage Range IVR −1.5 +1.5 V Common-Mode Rejection Ratio CMRR V = −1.5 V to +1.5 V 70 85 dB CM −40°C ≤ T ≤ +125°C 68 dB A Large Signal Voltage Gain A R = 100 kΩ, V = −1.2 V to +1.2 V 106 113 dB VO L O −40°C ≤ T ≤ +125°C 101 dB A R = 10 kΩ, V = −1.2 V to +1.2 V 92 94 dB L O −40°C ≤ T ≤ +125°C 85 dB A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 1.485 1.495 V OH L −40°C ≤ T ≤ +125°C 1.480 V A R = 10 kΩ to GND 1.470 1.480 V L −40°C to +125°C 1.455 V Output Voltage Low V R = 100 kΩ to GND −1.497 −1.490 V OL L −40°C ≤ T ≤ +125°C −1.480 V A R = 10 kΩ to GND −1.495 −1.485 V L −40°C ≤ T ≤ +125°C −1.475 V A Short-Circuit Limit I Source/sink ±30 mA SC Closed-Loop Impedance Z f = 1 MHz, A = +1 130 Ω OUT V POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 36 V 98 112 dB SY −40°C ≤ T ≤ +125°C 90 dB A Supply Current per Amplifier I I = 0 mA 165 200 µA SY O −40°C ≤ T ≤ +125°C 300 µA A DYNAMIC PERFORMANCE Slew Rate SR R = 100 kΩ, C = 30 pF 0.4 V/µs L L Settling Time t To 0.01% 25 µs S Gain Bandwidth Product GBP 1.2 MHz Phase Margin Φ 66 Degrees M NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.8 µV p-p n Voltage Noise Density e f = 1 kHz 30 nV/√Hz n Rev. B | Page 3 of 20 Document Outline Features Applications Pin Configuration General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Theory of Operation Input Stage Output Stage Input Overvoltage Protection Comparator Operation Outline Dimensions Ordering Guide
VSY = ±1.5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V −1.5 +0.2 +1.5 mV OS −40°C ≤ T ≤ +125°C −2.5 +2.5 mV A Offset Voltage Drift ΔV /ΔT 3 µV/°C OS Input Bias Current I −60 −45 nA B −40°C ≤ T ≤ +85°C −60 +60 nA A −40°C ≤ T ≤ +125°C −275 +275 nA A Input Offset Current I −4 +1 +4 nA OS −40°C ≤ T ≤ +85°C −5 +5 nA A −40°C ≤ T ≤ +125°C −75 +75 nA A Input Voltage Range IVR −1.5 +1.5 V Common-Mode Rejection Ratio CMRR V = −1.5 V to +1.5 V 70 85 dB CM −40°C ≤ T ≤ +125°C 68 dB A Large Signal Voltage Gain A R = 100 kΩ, V = −1.2 V to +1.2 V 106 113 dB VO L O −40°C ≤ T ≤ +125°C 101 dB A R = 10 kΩ, V = −1.2 V to +1.2 V 92 94 dB L O −40°C ≤ T ≤ +125°C 85 dB A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 1.485 1.495 V OH L −40°C ≤ T ≤ +125°C 1.480 V A R = 10 kΩ to GND 1.470 1.480 V L −40°C to +125°C 1.455 V Output Voltage Low V R = 100 kΩ to GND −1.497 −1.490 V OL L −40°C ≤ T ≤ +125°C −1.480 V A R = 10 kΩ to GND −1.495 −1.485 V L −40°C ≤ T ≤ +125°C −1.475 V A Short-Circuit Limit I Source/sink ±30 mA SC Closed-Loop Impedance Z f = 1 MHz, A = +1 130 Ω OUT V POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 36 V 98 112 dB SY −40°C ≤ T ≤ +125°C 90 dB A Supply Current per Amplifier I I = 0 mA 165 200 µA SY O −40°C ≤ T ≤ +125°C 300 µA A DYNAMIC PERFORMANCE Slew Rate SR R = 100 kΩ, C = 30 pF 0.4 V/µs L L Settling Time t To 0.01% 25 µs S Gain Bandwidth Product GBP 1.2 MHz Phase Margin Φ 66 Degrees M NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.8 µV p-p n Voltage Noise Density e f = 1 kHz 30 nV/√Hz n Rev. B | Page 3 of 20 Document Outline Features Applications Pin Configuration General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Theory of Operation Input Stage Output Stage Input Overvoltage Protection Comparator Operation Outline Dimensions Ordering Guide
