Datasheet FDN304P (ON Semiconductor) - 3

ManufacturerON Semiconductor
DescriptionP-Channel 1.8V Specified PowerTrench MOSFET
Pages / Page8 / 3 — Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ. …
RevisionB
File Format / SizePDF / 269 Kb
Document LanguageEnglish

Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ. Max. Units. Off Characteristics. On Characteristics. (Note 2)

Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics On Characteristics (Note 2)

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Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA,Referenced to 25°C –13 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.8 –1.5 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C 3 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –4.5 V, ID = –2.4 A 36 52 mΩ On–Resistance VGS = –2.5 V, ID = –2.0 A 47 70 VGS = –1.8V, ID = –1.8 A 65 100 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 12 S
Dynamic Characteristics
Ciss Input Capacitance 1312 pF VDS = –10 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 240 pF Crss Reverse Transfer Capacitance 106 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time V 15 27 ns DD = –10 V, ID = –1 A, t V r Turn–On Rise Time GS = –4.5 V, RGEN = 6 Ω 15 27 ns td(off) Turn–Off Delay Time 40 64 ns tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge V 12 20 nC DS = –10 V, ID = –2.4 A, Q VGS = –4.5 V gs Gate–Source Charge 2 nC Qgd Gate–Drain Charge 2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V Voltage
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 250°C/W when mounted on a b) 270°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. minimum pad. Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN304P Rev C(W)