Electrical Characteristics T = 25°C unless otherwise noted A SymbolParameterTest ConditionsMinTypMaxUnitsOff Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS Breakdown Voltage Temperature ID = –250 µA,Referenced to 25°C –13 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA On Characteristics(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.8 –1.5 V ∆VGS(th) Gate Threshold Voltage ID = –250 µA,Referenced to 25°C 3 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain–Source VGS = –4.5 V, ID = –2.4 A 36 52 mΩ On–Resistance VGS = –2.5 V, ID = –2.0 A 47 70 VGS = –1.8V, ID = –1.8 A 65 100 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 12 S Dynamic Characteristics Ciss Input Capacitance 1312 pF VDS = –10 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 240 pF Crss Reverse Transfer Capacitance 106 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time V 15 27 ns DD = –10 V, ID = –1 A, t V r Turn–On Rise Time GS = –4.5 V, RGEN = 6 Ω 15 27 ns td(off) Turn–Off Delay Time 40 64 ns tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge V 12 20 nC DS = –10 V, ID = –2.4 A, Q VGS = –4.5 V gs Gate–Source Charge 2 nC Qgd Gate–Drain Charge 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V Voltage Notes:1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 250°C/W when mounted on a b) 270°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN304P Rev C(W)