Datasheet BD136G, BD138G, BD140G (ON Semiconductor) - 4

ManufacturerON Semiconductor
Description1.5 A POWER TRANSISTORS PNP SILICON 45, 60, 80 V, 12.5 W
Pages / Page5 / 4 — PACKAGE DIMENSIONS. TO−225. FRONT VIEW. BACK VIEW. SCALE 1:1. …
Revision16
File Format / SizePDF / 176 Kb
Document LanguageEnglish

PACKAGE DIMENSIONS. TO−225. FRONT VIEW. BACK VIEW. SCALE 1:1. MILLIMETERS. PIN 4. DIM. MIN. MAX. BACKSIDE TAB. GENERIC. MARKING DIAGRAM*. 2X b2

PACKAGE DIMENSIONS TO−225 FRONT VIEW BACK VIEW SCALE 1:1 MILLIMETERS PIN 4 DIM MIN MAX BACKSIDE TAB GENERIC MARKING DIAGRAM* 2X b2

Model Line for this Datasheet

Text Version of Document

MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS TO−225
CASE 77−09 4 ISSUE AD DATE 25 MAR 2015 1 2 3 3 2 1
FRONT VIEW BACK VIEW SCALE 1:1 E
NOTES: 1. DIMENSIONING AND TOLERANCING PER
A1
ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.
Q A
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
MILLIMETERS PIN 4 DIM MIN MAX BACKSIDE TAB A
2.40 3.00
A1
1.00 1.50
b
0.60 0.90
D b2
0.51 0.88
c
0.39 0.63
P D
10.60 11.10
E
7.40 7.80
1 2 3 e
2.04 2.54
L
14.50 16.63
L1
1.27 2.54
P
2.90 3.30
Q
3.80 4.20
L1 GENERIC L MARKING DIAGRAM*
YWW XX XXXXXG
2X b2
Y = Year WW = Work Week XXXXX = Device Code
2X e b c
G = Pb−Free Package *This information is generic. Please refer to
FRONT VIEW SIDE VIEW
device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. EMITTER PIN 1. CATHODE PIN 1. BASE PIN 1. ANODE 1 PIN 1. MT 1 2., 4. COLLECTOR 2., 4. ANODE 2., 4. COLLECTOR 2., 4. ANODE 2 2., 4. MT 2 3. BASE 3. GATE 3. EMITTER 3. GATE 3. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. CATHODE PIN 1. MT 1 PIN 1. SOURCE PIN 1. GATE PIN 1. SOURCE 2., 4. GATE 2., 4. GATE 2., 4. GATE 2., 4. DRAIN 2., 4. DRAIN 3. ANODE 3. MT 2 3. DRAIN 3. SOURCE 3. GATE
DOCUMENT NUMBER: 98ASB42049B
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DESCRIPTION: TO−225 PAGE 1 OF 1
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