Datasheet 2SB1548 (Panasonic)

Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A ■ Features Unit: mm ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with 9.9±0.3 4.6±0.2 one screw 2.9±0.2 ±0.5 ■ Absolute Maximum Ratings (T 3.0 C=25˚C) ±0.5 φ3.2±0.1 Parameter Symbol Ratings Unit 15.0 Collector to 2SB1548 –60 VCBO V 1.4±0.2 base voltage 2SB1548A –80 2.6±0.1 ±0.2 1.6±0.2 Collector to 2SB1548 –60 ±0.2 4.2 V V 0.8±0.1 0.55±0.15 CEO 13.7 emitter voltage 2SB1548A –80 2.54 Emitter to base voltage V –5 V ±0.3 EBO 1 2 3 5.08±0.5 Peak collector current ICP –5 A Collector current IC –3 A 1:Base Collector power T 25 C=25°C P W 2:Collector C dissipation Ta=25°C 2 3:Emitter TO–220D Full Pack Package Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SB1548 VCE = –60V, VBE = 0 –200 I µ CES A current 2SB1548A VCE = –80V, VBE = 0 –200 Collector cutoff 2SB1548 VCE = –30V, IB = 0 –300 I µ CEO A current 2SB1548A VCE = –60V, IB = 0 –300 Emitter cutoff current IEBO VEB = –5V, IC = 0 –1 mA Collector to emitter 2SB1548 –60 VCEO IC = –30mA, IB = 0 V voltage 2SB1548A –80 h * FE1 VCE = –4V, IC = –1A 70 250 Forward current transfer ratio hFE2 VCE = –4V, IC = –3A 10 Base to emitter voltage VBE VCE = –4V, IC = –3A –1.8 V Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A –1.2 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 30 MHz Turn-on time t µ on 0.5 s Storage time t µ stg IC = –1A, IB1 = – 0.1A, IB2 = 0.1A 1.2 s Fall time t µ f 0.3 s *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1