Datasheets STMicroelectronics - 6
Manufacturer: "STMicroelectronics"
Search results: 3,934 Output: 101-120
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- N-channel 45 V, 1.4 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package All features Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
- Automotive 3A single channel LED driver with integrated DC-DC converter All features AECQ100 qualification Up to 3 A DC output current 4.5 V to 61 V operating input voltage R DS(on) = 250 mΩ typ. Adjustable f SW (250 kHz - 1.5 MHz) Dimming function ...
- Automotive Linear Voltage Regulator with Configurable Output Voltage having 200mA current capability All features AEC-Q100 qualified Operating DC power supply voltage range from 2.15 V to 28 V Battery and post regulation operating modes are allowed ...
- Ultra-low-power Arm Cortex-M33 32-bit MCU+TrustZone+FPU,165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220FP package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a D2PAK package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-247 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- Automotive dual-line TVS in DFN for CAN bus protection All features AEC-Q101 qualified Dual-line ESD and EOS protection Triggering voltage, V TRIG min = 28 V QFN-3L 1.1 x 1.0 x 0.55 package also called DFN1110 Bidirectional device Max pulse power ...
- MEMS digital output motion sensor: high-performance 3-axis accelerometer for automobile applications All features AEC-Q100 qualified ±2g/±4g/±8g/±16g dynamically selectable full scales Low power consumption down to 110 µA in high-performance mode ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- 38 V, 1.5 A synchronous step-down converter with low quiescent current All features 3.5 V to 38 V operating input voltage Output voltage from 0.85 V to V IN 1.5 A DC output current Internal compensation network Two different versions: LCM for high ...
- Silicon NPN Transistors The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrialline-operated applications.
- Silicon NPN Transistors The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrialline-operated applications.
- Mainstream Value line 8-bit MCU with 8 Kbytes Flash, 16 MHz CPU, integrated EEPROM All features Core 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline Extended instruction set Memories Program memory: 8 Kbyte Flash memory; ...
- N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF ...
- N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-3PF All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF plastic ...
- N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247 All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF plastic ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- High bandwidth (22MHz) Low offset (200µV) 5V Op amp All features Gain bandwidth product 22 MHz, unity gain stable High accuracy input offset voltage: 50 µV typ., 200 µV max. Low input bias current: 2 pA typ. Low input voltage noise density: 7 ...
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