Datasheets
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- H-Bridge Gate Driver for Automotive Applications The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free ...
- H-Bridge Gate Driver for Automotive Applications The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free ...
- H-Bridge Gate Driver for Automotive Applications The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free ...
- Constant-Frequency, Current-Mode Step-Up DC-to-DC Controller The ADP1621 is a fixed-frequency, pulse-width modulation (PWM), current-mode, step-up converter controller. It drives an external n-channel MOSFET to convert the input voltage to a higher ...
- Constant-Frequency, Current-Mode Step-Up DC-to-DC Controller The ADP1621 is a fixed-frequency, pulse-width modulation (PWM), current-mode, step-up converter controller. It drives an external n-channel MOSFET to convert the input voltage to a higher ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
- HEXFET Power MOSFET
- 2.5V Low Knee Current voltage reference Description The ZRC250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline surface mount package, ideal for applications ...
2.5V Low Knee Current voltage reference Description The ZRC250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline surface mount package, ideal for applications ...- 2.5V Low Knee Current voltage reference Description The ZRC250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline surface mount package, ideal for applications ...
- 2.5V Low Knee Current voltage reference Description The ZRC250 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline surface mount package, ideal for applications ...
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
- Silicon P Channel MOSFET Not Recommended for New Designs
