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650V N-Channel MOSFET in TO247-4 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...

650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...

650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...

800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...

800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...

800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...

BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC in 32-VQFN (5x5) package

BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC in 32-VQFN (5x5) package

Phase input interface design improves noise immunity to prevent step-out, enabling stable and reliable control in demanding industrial environments Toshiba Electronics Europe announces the launch of the TB67S531FTG , a constant-current, two-phase ...

Ampleon extends its industrial GaN RF power portfolio with the new CLF09H4LS800P , an 800 W GaN-on-SiC HEMT fully optimized for the 902 928 MHz ISM band. Built for particle accelerator systems, industrial RF heating and plasma generation equipment, ...