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IGBT, TO-247-3L, N-Fast, 1350 V, 30 A

Xu Zhang received his B.S./M.S. degrees in electrical engineering from Tsinghua University, Beijing, China, in 2000 and 2003, respectively. He received a Ph.D. degree in electrical engineering from the University of Colorado at Boulder, Boulder, ...

Fast Switching IGBT with Reverse Diode

SoundPlus Low-Power, Low-Noise, High-Performance Dual Bipolar-Input Audio Op Amp

Electret Condenser Microphone 3-wire type, High S/N, Supports high input SPL / General purpose

This timer circuit draws only 3 µA of current, and can be powered by DC supplies ranging from 3 V to 15 V. The circuit produces accurate pulses whose time can easily be adjusted, based on the R1 × C1 time constant. The time should not ...

1200V N-Channel SiC MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...

1200V, 40 Ohm, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced EMI.

1200V, 100A, 16Ohm, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced ...

1200V, 100A, 16Ohm, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced ...