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José Carrasco received the M.Sc. degree in physics and the Ph.D. degree in electronics engineering from Universidad de Valencia, Valencia, Spain, in 1991 and 1996, respectively. After a period of two years as a Power Electronics Researcher ...

David Marroquí was born in Elche, Spain, in 1990. He received the M.Sc. degree in industrial engineering and the Ph.D. degree in industrial technologies from the Miguel Hernández University of Elche (UMH), Elche, Spain, in 2015 and ...

José M. Blanes was born in Elche, Spain, in 1974. He received the M.Sc. degree in telecommunication engineering from Universitat Politècnica de València, Valencia, Spain, in 1998, and the Ph.D. degree in industrial technologies ...

Ausiàs Garrigós (Senior Member, IEEE)was born in Xixona, Spain, in 1976. He received the M.Sc. degree in electronic engineering from the University of Valencia, Valencia, Spain, in 2000, and the Ph.D. degree in space power electronics ...

N-Channel MOSFET Transistor in TO-247 package

N-Channel MOSFET Transistor in TO-247 package

Luis Onofre Lazaro is an applications engineer for the Power Control Group at Analog Devices in California. Luis joined ADI after graduating from California Polytechnic State University in 2020 with a B.S. in electrical en gineering.

Kurk Mathews is a senior applications manager for the Power Products Group at Analog Devices in California. Kurk joined Linear Technology, now part of Analog Devices, as an applications engineer in 1994, supporting isolate d converters and high ...

30 V, 200 mA General purpose Signal Schottky Diode in DO-35 package General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic ...

30 V, 200 mA General purpose Signal Schottky Diode in DO-35 package General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic ...