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N-Channel MOSFET Transistor in TO-247 package

N-Channel MOSFET Transistor in TO-247 package

Luis Onofre Lazaro is an applications engineer for the Power Control Group at Analog Devices in California. Luis joined ADI after graduating from California Polytechnic State University in 2020 with a B.S. in electrical en gineering.

Kurk Mathews is a senior applications manager for the Power Products Group at Analog Devices in California. Kurk joined Linear Technology, now part of Analog Devices, as an applications engineer in 1994, supporting isolate d converters and high ...

30 V, 200 mA General purpose Signal Schottky Diode in DO-35 package General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic ...

30 V, 200 mA General purpose Signal Schottky Diode in DO-35 package General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic ...

Abstract This article discusses the need for precise gate voltage control and accurate gate measurements when using gallium nitride field-effect transistors (GaN FETs). High-side gate measurements taken with advanced isolated probes are compared to ...

TSD 240x240 resolution rotary knob display with STM32C091 MCU TSD TFT item number TSS013004A-AD is 1.3 inch, 240x240 resolution IPS round TFT LCD display with STM32C091 MCU, compaible with a square AD board, add USB-to-UART to support easy UART ...

100 V, 231 A Enhancement-Mode GaN Power Transistor

Diode for 1mW Class Rectifier in DFN1212-4-HD package The NT9003HDAE4S is a 1 mW-class rectifier diode optimized for rectifier circuits in microwave WPT operating in the 920 MHz, 2.4 GHz, and 5.7 GHz bands. This diode features low forward voltage ...