Datasheet TK4P60DA - Toshiba MOSFET, N CH, 600 V, 3.5 A, DPAK

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 3.5 A, DPAK

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Docket:
TK4P60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK4P60DA
Switching Regulator Applications
· · · · Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Specifications:

• Continuous Drain Current Id: 3.5 A
• Drain Source Voltage Vds: 600 V
• Number of Pins: 3
• On Resistance Rds(on): 1.7 Ohm
• Power Dissipation: 35 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D PAK
• Fischer Elektronik - WLK 5
• International Rectifier - IRS2011SPBF