Datasheets - Single FETs, MOSFETs
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,187 Output: 1-20
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- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
- 40V +175 C N-Channel Enhancement Mode MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC ...
40V Complementary Enhancement Mode MOSFET H-Bridge This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.- 40V Complementary Enhancement Mode MOSFET H-Bridge This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.
N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ...- N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ...
- N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ...
Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 Obsolete MCH6613 is a Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 for General-Purpose Switching Device ...- Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 Obsolete MCH6613 is a Small Signal MOSFET, 30V, 0.35A, 3.7Ω, -30V, -0.2A, 10.4Ω, Complementary MCPH6 for General-Purpose Switching Device ...
P-Channel Enhancement Mode MOSFET This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise R DS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and ...- P-Channel Enhancement Mode MOSFET This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise R DS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and ...
RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...- RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...
- RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...
RF power GaN-SiC HEMT 300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is ...