Datasheets - MOSFET Single Transistors

Subsection: "MOSFET Single Transistors"
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  1. Datasheet Vishay SiZF300DT-T1-GE3
    Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  2. Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  3. HF / VHF power LDMOS transistor A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  4. Datasheet Ampleon BLF978PU
    HF / VHF power LDMOS transistor A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  1. HF / VHF power LDMOS transistor A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  2. Datasheet Ampleon BLF974PU
    HF / VHF power LDMOS transistor A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  3. 30V Synchronous N-Channel Enhancement Mode MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  4. 30V Synchronous N-Channel Enhancement Mode MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  5. HEXFET Power MOSFET, V DSS = 55 V, R DS(on) = 16.5 mΩ, I D = 30 A, TO-220AB
  6. HEXFET Power MOSFET, V DSS = 55 V, RDS (on) = 0.035 Ω, I D = 30 A, TO-220AB
  7. MOSFET, 55 V, 12 A, TO-220 Specifications: Continuous Drain Current Id: 12 A Current Id Max: -12 A Current Temperature: 25 C Drain Source Voltage Vds: 55 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 3.3 C/W Lead ...
  8. Datasheet International Rectifier IRF9Z24NPBF
    MOSFET, 55 V, 12 A, TO-220 Specifications: Continuous Drain Current Id: 12 A Current Id Max: -12 A Current Temperature: 25 C Drain Source Voltage Vds: 55 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 3.3 C/W Lead ...
  9. Silicon Carbide MOSFET, Enhancement Mode
  10. N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in D2PAK package These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the ...
  11. N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the ...
  12. Datasheet IXYS IXTP02N50D
    High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
  13. Datasheet Littelfuse IXTP02N50D
    High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
  14. Datasheet Littelfuse IXTU02N50D
    High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
  15. Datasheet IXYS IXTU02N50D
    High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
  16. Datasheet IXYS IXTY02N50D
    High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...