Datasheets - Single FETs, MOSFETs
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics JX Semiconductor Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba VBsemi Vishay Wayon Wolfspeed YoutaiSearch results: 7,033 Output: 1-20
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1200V N-Channel SiC MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...- 1200V N-Channel SiC MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
- 1200V N-Channel SiC MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
- 1200V, 40 Ohm, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced EMI.
- 1200V, 100A, 16Ohm, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced ...
- 1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...
- 1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET in TO-247-3 package The JX-MT3 series SiC MOSFET in TO-247-3 package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...
- 1700V SiC N-Channel MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
- 1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package The JX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...
- 3300V SiC N-Channel MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
650V N-Channel MOSFET in TO247-4 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...- 650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
- 650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...- 900V N-Channel SiC MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
- Power MOSFET in TO-247 package
- Power MOSFET in TO-247 package
- Power MOSFET
- Power MOSFET
- Power MOSFET