Datasheets - MOSFET Single Transistors

Subsection: "MOSFET Single Transistors"
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  1. Datasheet Vishay SQJA81EP-T1_GE3
    Automotive P-Channel 80 V (D-S) 175 C MOSFET
  2. Automotive P-Channel 80 V (D-S) 175 C MOSFET
  3. N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF ...
  4. N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-3PF All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF plastic ...
  1. Nch Single Power Mosfet 1500V 2A Mohm To-3Pfm Not Recommended for New Designs MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
  2. Nch Single Power Mosfet 1500V 2A Mohm To-3Pfm Not Recommended for New Designs MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
  3. N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247 All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF plastic ...
  4. 1700V Silicon Carbide MOSFETs Wolfspeed 1700V SiC MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions, Wolfspeed silicon carbide technology enables increased system power density, higher switching ...
  5. 1700V Silicon Carbide MOSFETs Wolfspeed 1700V SiC MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions, Wolfspeed silicon carbide technology enables increased system power density, higher switching ...
  6. 1700V Silicon Carbide MOSFETs Wolfspeed 1700V SiC MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions, Wolfspeed silicon carbide technology enables increased system power density, higher switching ...
  7. 1700V Silicon Carbide MOSFETs Wolfspeed 1700V SiC MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions, Wolfspeed silicon carbide technology enables increased system power density, higher switching ...
  8. 1700V Silicon Carbide MOSFETs Wolfspeed 1700V SiC MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions, Wolfspeed silicon carbide technology enables increased system power density, higher switching ...
  9. N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET All features TYPICAL R DS (on) = 0.020Ω 100% AVALANCHE TESTED EXCEPTIONAL dv/dt CAPABILITY SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE REEL (SUFFIX “T4\) THROUGH-HOLE IPAK ...
  10. N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET All features TYPICAL R DS (on) = 0.020Ω 100% AVALANCHE TESTED EXCEPTIONAL dv/dt CAPABILITY SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE REEL (SUFFIX “T4) ...
  11. N-Channel 60V - 0.022Ω - 35A DPAK/IPAK STripFET Power MOSFET
  12. N-channel 60 V, 0.022 Ohm typ., 35 A STripFET II Power MOSFET in a DPAK package All features Low threshold drive Gate charge minimized
  13. Automotive-grade N-channel 60 V, 22 mOhm typ., 35 A STripFET II Power MOSFET in a DPAK package All features AEC-Q101 qualified Low threshold drive Gate charge minimized
  14. 1.2V Drive Pch MOSFET MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the ...
  15. Datasheet Rohm RZM001P02T2L
    1.2V Drive Pch MOSFET MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the ...
  16. Datasheet Nexperia BUK9V13-40HX
    Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed ...
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