Datasheets - MOSFET Single Transistors

Subsection: "MOSFET Single Transistors"
Search results: 7,818 Output: 1-20

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  1. Datasheet Efficient Power Conversion EPC2207
    200 V, 54 A Enhancement-Mode GaN Power Transistor VDS, 200 V RDS(on), 22 mΩ ID, 14 A Pulsed ID, 54 A
  2. Datasheet Efficient Power Conversion EPC2215
    200 V, 162 A Enhancement-Mode GaN Power Transistor VDS, 200 V RDS(on), 8 mΩ ID, 32 A Pulsed ID, 162 A
  3. 30V N-Channel MOSFET
  4. Datasheet Toshiba XPN7R104NC
    Power MOSFET (N-ch single 30V VDSS≤60V)
  1. Datasheet Toshiba XPN6R706NC
    Power MOSFET (N-ch single 30V VDSS≤60V)
  2. Datasheet Toshiba XPN3R804NC
    Power MOSFET (N-ch single 30V VDSS≤60V)
  3. Datasheet Toshiba XPN12006NC
    Power MOSFET (N-ch single 30V VDSS≤60V)
  4. Datasheet Vishay SiRA99DP-T1-GE3
    P-Channel 30 V (D-S) MOSFET
  5. P-Channel 30 V (D-S) MOSFET
  6. Datasheet International Rectifier IRL540NPBF
    MOSFET, N, 100 V, 36 A, TO-220 Specifications: Continuous Drain Current Id: 30 A Current Id Max: 36 A Current Temperature: 25 C Drain Source Voltage Vds: 100 V Full Power Rating Temperature: 25 C Junction to Case Thermal Resistance A: 1.1 C/W Lead ...
  7. P-Channel 1.8V Specified PowerTrench MOSFET -20V, -2.4A, 52mΩ
  8. P-Channel 1.8V Specified PowerTrench MOSFET -20V, -2.4A, 52mΩ
  9. Datasheet Vishay SiZF300DT-T1-GE3
    Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  10. Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
  11. HF / VHF power LDMOS transistor A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  12. Datasheet Ampleon BLF978PU
    HF / VHF power LDMOS transistor A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  13. HF / VHF power LDMOS transistor A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  14. Datasheet Ampleon BLF974PU
    HF / VHF power LDMOS transistor A 500 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.
  15. 30V Synchronous N-Channel Enhancement Mode MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  16. 30V Synchronous N-Channel Enhancement Mode MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.