Datasheets - Single FETs, MOSFETs
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,211 Output: 1-20
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N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package- N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package
- N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET
N-Channel Power MOSFET in TO-247-3 package- N-Channel Power MOSFET in TO-247-3 package
Automotive N-Channel 80 V (D-S) 175 C MOSFET- Automotive N-Channel 80 V (D-S) 175 C MOSFET
- Automotive N-Channel 80 V (D-S) 175 C MOSFET
P-Channel 100-V (D-S) MOSFET Halogen-free According to IEC 61249-2-21 Available. TrenchFET Power MOSFET- P-Channel 100-V (D-S) MOSFET Halogen-free According to IEC 61249-2-21 Available. TrenchFET Power MOSFET
- P-Channel 100-V (D-S) MOSFET Halogen-free According to IEC 61249-2-21 Available. TrenchFET Power MOSFET
Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.- 20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.- 20 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 20 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 40 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.