Datasheets MOSFET Single Transistors

Subsection: "MOSFET Single Transistors"
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  1. 650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
  2. Datasheet Nexperia GAN063-650WSAQ
    650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
  3. Datasheet Motorola MTD20P06HDL
    P Channel Enhancement Mode Silicon Gate TMOS Power FET Logic Level 15 Amperes 60 Volts RDS(on) = 175 MΩ This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy ...
  4. Datasheet Infineon IPP230N06L3 G
    MOSFET N-Ch 60V 30A TO220-3
  1. Datasheet Infineon IPB230N06L3 G
    MOSFET N-Ch 200V 30A D2PAK-2
  2. N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package This device is an N-channel Power MOSFET based on MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The ...
  3. N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ ...
  4. N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known ...
  5. 600V three phase MOSFET or IGBT driver. The MIC4609 features a 300ns typical input filtering time to prevent unwanted pulses and a 550ns of propagation delay. The MIC4609 has TTL input thresholds. The robust operation of the MIC4609 ensures that ...
  6. 600V three phase MOSFET or IGBT driver. The MIC4609 features a 300ns typical input filtering time to prevent unwanted pulses and a 550ns of propagation delay. The MIC4609 has TTL input thresholds. The robust operation of the MIC4609 ensures that ...
  7. 600V three phase MOSFET or IGBT driver. The MIC4609 features a 300ns typical input filtering time to prevent unwanted pulses and a 550ns of propagation delay. The MIC4609 has TTL input thresholds. The robust operation of the MIC4609 ensures that ...
  8. Datasheet Infineon IGLD60R190D1AUMA1
    Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability
  9. Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability
  10. Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability
  11. Datasheet Infineon IGT40R070D1E8220ATMA1
    Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability
  12. Power MOSFET The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 Watts. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating ...
  13. 100V N-Channel AlphaSGT
  14. 60V N-Channel AlphaSGT
  15. 60V N-Channel AlphaSGT
  16. Datasheet Infineon SPD50P03LGBTMA1