Datasheets - MOSFET Single Transistors

Subsection: "MOSFET Single Transistors"
Search results: 8,130 Output: 1-20

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  1. HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
  2. HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
  1. HEXFET Power MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C ...
  2. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  3. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  4. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  5. N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
  6. N-Channel MOSFET Transistor Motor drive, DC-DC converter, power switch and solenoid drive
  7. Super Low Noise HEMT The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically ...
  8. Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
  9. Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
  10. Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
  11. HEXFET Power MOSFET
  12. Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
  13. Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
  14. Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
  15. Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
  16. Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
  17. Silicon P Channel MOSFET, Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Not Recommended for New Designs
  18. Silicon P Channel MOSFET Not Recommended for New Designs
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