Datasheets - Single FETs, MOSFETs
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,173 Output: 1-20
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P-Channel Enhancement Mode MOSFET This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise R DS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and ...- P-Channel Enhancement Mode MOSFET This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise R DS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and ...
RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...- RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...
- RF power GaN-SiC HEMT 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is ...
RF power GaN-SiC HEMT 300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is ...- RF power GaN-SiC HEMT 300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is ...
- RF power GaN-SiC HEMT 300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is ...
20V 1A Nch Power MOSFET The ultra-small package(1006size) RV2C010UN is suitable for portable devices.- 20V 1A Nch Power MOSFET The ultra-small package(1006size) RV2C010UN is suitable for portable devices.
2.5V Drive P-channel MOSFET Products discontinuation (EOL) has been announced.- 2.5V Drive P-channel MOSFET Products discontinuation (EOL) has been announced.
- N-Channel MOSFET Transistor in TO-3 Package
1.2V Drive Nch MOSFET MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the ...- The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
- The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
- The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
- The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...
- P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality ...
- P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality ...