Datasheets - MOSFET Single Transistors

Subsection: "MOSFET Single Transistors"
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  1. Datasheet Vishay IRF510PbF-BE3
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  2. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  1. Datasheet Vishay IRF510PbF
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  2. -60V-100V Small Signal MOSFET Package:SOT-23
  3. P-Channel, POWERTRENCH, Logic Level MOSFET This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.
  4. P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
  5. Datasheet Vishay Si3457CDV-T1-E3
    P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
  6. Datasheet Vishay Si3457CDV-T1-GE3
    P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
  7. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  8. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  9. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  10. N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
  11. Datasheet Vishay SiHF640
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  12. Datasheet Vishay SiHF640-E3
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  13. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  14. Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  15. Datasheet Vishay IRF640PbF
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  16. Datasheet Vishay IRF640
    Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
  17. 150 V, 329 A Enhancement Mode GaN Power Transistor
  18. 200 V, 260 A Enhancement Mode GaN Power Transistor