Datasheet SI4501BDY-T1-GE3 - Vishay MOSFET, NP CH, W/D, 30V/8V, SO8
Part Number: SI4501BDY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, NP CH, W/D, 30V/8V, SO8
Docket:
Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 30 -8 RDS(on) () 0.017 at VGS = 10 V 0.020 at VGS = 4.5 V 0.027 at VGS = - 4.5 V 0.037 at VGS = - 2.5 V ID (A)a Qg (Typ.) 12 11 -8 - 6.8 7.9 16.5
Specifications:
- Continuous Drain Current Id: 12 A
- Drain Source Voltage Vds: 30 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.0135 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 4.5 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N and P Channel
RoHS: Yes
Other Names:
SI4501BDYT1GE3, SI4501BDY T1 GE3