Datasheets - FET, MOSFET Arrays & Modules
Subsection: "FET, MOSFET Arrays & Modules"
Manufacturers
Alpha & Omega Diodes Fairchild Fortune Semiconductor International Rectifier MCC Microchip NTE Electronics NXP ON Semiconductor Panasonic Rohm Sanyo Semelab Semikron STMicroelectronics Taiwan Semiconductor Texas Instruments Toshiba VishaySearch results: 480 Output: 1-20
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- Dual N-Channel Enhancement Mode Power MOSFET Advanced Power MOSFETs utilized advanced processing techniques to achieve low on-resistance, extremely efficient and cost-effective device best suited for lithium-ion Battery charging and discharging ...
- Complementary Enhancement Mode Field Effect Transistor The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
- SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package The NXH006P120MNF2 is a half-bridge or 2-PACK SiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and ...
- SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
- SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
- Dual N-Channel Enhancement Mode Power MOSFET Advanced Power MOSFETs utilized advanced processing techniques to achieve low on-resistance, extremely efficient and cost-effective device best suited for lithium-ion Battery charging and discharging ...
- TC8220 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
- TC8220 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
- TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package
- TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package
- TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package
- TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
- TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
- TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175 C
- TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175 C
- TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages
- TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages
- TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages
- TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package
- TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package
