Datasheet SI4564DY-T1-GE3 - Vishay MOSFET, NP CH, W/DIODE, 40 V, SO8
Part Number: SI4564DY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, NP CH, W/DIODE, 40 V, SO8
Docket:
Si4564DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 40 - 40 RDS(on) () 0.0175 at VGS = 10 V 0.020 at VGS = 4.5 V 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V ID (A)a Qg (Typ.) 10 9.2 - 9.2 - 7.4 9.8 21.7
Specifications:
- Continuous Drain Current Id: 10 A
- Drain Source Voltage Vds: 40 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.0145 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 3.1 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N and P Channel
RoHS: Yes
Other Names:
SI4564DYT1GE3, SI4564DY T1 GE3