Datasheet SI4618DY-T1-GE3 - Vishay MOSFET, NN CH, SCH DIODE, 30 V, SO8
Part Number: SI4618DY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, NN CH, SCH DIODE, 30 V, SO8
Docket:
Si4618DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 Channel-2 30 30 RDS(on) () 0.017 at VGS = 10 V 0.0195 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.0 12.5 7.5 15.2 17 14.1
Specifications:
- Continuous Drain Current Id: 8 A
- Drain Source Voltage Vds: 30 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.014 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 1.98 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
RoHS: Yes
Other Names:
SI4618DYT1GE3, SI4618DY T1 GE3