Datasheet BSP299 L6327 - Infineon MOSFET, N-CH, 500 V, 400 mA, SOT-223

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N-CH, 500 V, 400 mA, SOT-223

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Docket:
BSP299
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Avalanche rated · VGS(th)= 2.1 ...

4.0 V · Pb-free lead plating; RoHS compliant · Qualified according to AEC Q101 Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type
VDS 500 V

Specifications:

• Continuous Drain Current Id: 400 mA
• Drain Source Voltage Vds: 500 V
• MSL: MSL 3 - 168 hours
• Number of Pins: 4
• On Resistance Rds(on): 3.1 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• RoHS: Yes