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Datasheet SPD08P06P G - Infineon MOSFET, P-CH, 60 V, 8.83 A, DPAK

Infineon SPD08P06P G

Part Number: SPD08P06P G

Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 8.83 A, DPAK

data sheetDownload Data Sheet

Docket:
SPD08P06P G
SIPMOS Power-Transistor

Product Summary V DS R DS(on),max ID -60 0.3 -8.8 V A
Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175C operating temperature Pb-free lead finishing; RoHS compliant

Specifications:

  • Continuous Drain Current Id: -8.83 A
  • Drain Source Voltage Vds: -60 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.23 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 42 W
  • Rds(on) Test Voltage Vgs: -6.2 V
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: P Channel
  • RoHS: Yes

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