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Datasheet International Rectifier IRFH4257DTRPbF

Manufacturer:International Rectifier
Family:IRFH4257D
Series:IRFH4257DPbF
Part Number:IRFH4257DTRPbF

HEXFET Power MOSFET. FastIRFET dual power MOSFET housed in a high performance 4×5 PQFN power block package

Datasheets

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    FastIRFETTM IRFH4257DPbF
    HEXFET Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25C) 25 4.70 9.7 25 Q2 25 1.80 23 25 V m nC A Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (9.7nC typical) Low RDSON synchronous MOSFET (<1.8m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number IRFH4257DPbF Dual PQFN 5mm x 4mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Orderable Part Number IRFH4257DTRPbF Q1 Max. Q2 Max. 20 68 111 54 88 25 120 25 16 0.20 25 375 28 18 0.22 W W/C C Q2 Max. 4.5 26 40 27 Units C/W Units V Standard Pack Form Quantity Tape and Reel 4000 Absolute Maximum Ratings VGS ID @ TC = 25C ID @ TC = 70C ID @ TC = 25C IDM PD @TC = 25C PD @TC = 70C TJ TSTG Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Junction-to-Ambient RJA Junction-to-Ambient RJA (<10s) Notes through are on page 12 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Q1 Max. 5.0 33 45 30 A -55 to + 150 September 15, 2014 Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. Typ. 25 25 22 22 2.7 1.1 3.7 1.4 1.1 1.6 1.1 1.6 -5.4 -5.3 100 138 9.7 23 2.4 5.1 1.2 2.6 3.4 7.6 2.7 7.7 4.6 10.2 10 25 1.4 0.7 8.2 12 47 51 12 20 20 25 1321 3161 365 965 101 237 IRFH4257DPbF Max. Units Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA mV/C Reference to 25C, ID = 10mA 3.4 VGS = 10V, ID = 25A 1.4 VGS = 10V, ID = 25A m 4.7 VGS = 4.5V, ID = 25A 1.8 VGS = 4.5V, ID = 25A 2. ...

Docket:
FastIRFETTM IRFH4257DPbF
HEXFET Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25C) 25 4.70 9.7 25 Q2 25 1.80 23 25 V m nC A Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (9.7nC typical) Low RDSON synchronous MOSFET (<1.8m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number IRFH4257DPbF Dual PQFN 5mm x 4mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Orderable Part Number IRFH4257DTRPbF Q1 Max. Q2 Max. 20 68 111 54 88 25 120 25 16 0.20 25 375 28 18 0.22 W W/C C Q2 Max. 4.5 26 40 27 Units C/W Units V Standard Pack Form Quantity Tape and Reel 4000 Absolute Maximum Ratings VGS ID @ TC = 25C ID @ TC = 70C ID @ TC = 25C IDM PD @TC = 25C PD @TC = 70C TJ TSTG Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Junction-to-Ambient RJA Junction-to-Ambient RJA (<10s) Notes through are on page 12 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback Parameter Gate-to-Source Voltage Continuous Drain Current...

  • Series: IRFH4257DPbF (1)
    • IRFH4257DTRPbF
  • All series of family IRFH4257D:
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