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Datasheet Vishay SI8410DB-T2-E1

Vishay SI8410DB-T2-E1

Manufacturer:Vishay
Series:Si8410DB
Part Number:SI8410DB-T2-E1

N-Channel 20 V (D-S) MOSFET

Documents:

Manufacturer's Classification:

MOSFETs

Other Names: SI8410DBT2E1, SI8410DB T2 E1

Docket:
Si8410DB
www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX. 0.037 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.047 at VGS = 1.8 V 0.068 at VGS = 1.5 V ID (A) a 5.7 5.4 5.0 4.2 5.9 nC Qg (TYP.) FEATURES TrenchFET power MOSFET Ultra small 1 mm x 1 mm maximum outline Ultra-thin 0.54 mm maximum height Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT 1 x 1 0 841xx x
m 1m Backside View
1 D 3 D 2 APPLICATIONS Load switch Power management High speed switching
1 G D Marking Code: 8410 Ordering Information: Si8410DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage TA = 25 C Continuous Drain Current (TJ = 150 C) TA = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (t = 100 s) Continuous Source-Drain Diode Current TC = 25 C TA = 25 C TA = 25 C Maximum Power Dissipation TA = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Package Reflow Conditions e VPR IR/Convection TJ, Tstg PD IDM I...

  • Series: Si8410DB (1)
    • SI8410DB-T2-E1
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