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Datasheet International Rectifier IRFH5406TRPBF

International Rectifier IRFH5406TRPBF

Manufacturer:International Rectifier
Series:IRFH5406PBF
Part Number:IRFH5406TRPBF

60 V Single N-Channel HEXFET Power MOSFET in a PQFN package

Documents:

Docket:
IRFH5406PbF
HEXFET Power MOSFET
VDS RDS(on) max
(@VGS = 10V) 60 14.4 21 1.1 40 V m nC A
PQFN 5X6 mm Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits
Features Benefits Low RDSon (< 14.4 m) Low Thermal Resistance to PCB (< 2.7C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5406TRPbF IRFH5406TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @ TC(Bottom) = 25C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 20 11 9 40 25...

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