Datasheet IXKR40N60C - IXYS MOSFET, N, ISOPLUS247
Part Number: IXKR40N60C
Detailed Description
Manufacturer: IXYS
Description: MOSFET, N, ISOPLUS247
Docket:
Advanced Technical Information
CoolMOS Power MOSFET
in ISOPLUS247TM Package
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base
VDSS IXKR 40N60C 600 V
Specifications:
- Capacitance Ciss Typ: 7600 pF
- Continuous Drain Current Id: 38 A
- Current Id Max: 38 A
- Drain Source Voltage Vds: 600 V
- Isolation Voltage: 2.5 kV
- Mounting Type: Through Hole
- N-channel Gate Charge: 250nC
- Number of Pins: 3
- On State Resistance: 70 MOhm
- Operating Temperature Range: -40°C to +150°C
- Package / Case: ISOPLUS-247
- Power Dissipation Pd: 280 W
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Max: 650 ns
- Rth: 0.45
- Threshold Voltage Vgs Typ: 3.9 V
- Transistor Case Style: ISOPLUS-247
- Transistor Polarity: N Channel
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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