Datasheet ON Semiconductor NTH4L015N065SC1
Manufacturer | ON Semiconductor |
Series | NTH4L015N065SC1 |
Part Number | NTH4L015N065SC1 |
Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L
Datasheets
Datasheet NTH4L015N065SC1
PDF, 280 Kb, Language: en, Revision: 0, File uploaded: Feb 24, 2021, Pages: 8
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A
Extract from the document
Prices
Detailed Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Status
Lifecycle Status | Active (Recommended for new designs) |
Packaging
Package | TO-247-4 |
Package Code | 340CJ |
Eco Plan
Compliance | AEC Qualified | PPAP Capable | Pb-free | Halide free |
Manufacturer's Classification
- Wide Bandgap > Silicon Carbide (SiC) MOSFETs