Datasheet ON Semiconductor NTH4L015N065SC1

ManufacturerON Semiconductor
SeriesNTH4L015N065SC1
Part NumberNTH4L015N065SC1

Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L

Datasheets

Datasheet NTH4L015N065SC1
PDF, 280 Kb, Language: en, Revision: 0, File uploaded: Feb 24, 2021, Pages: 8
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A
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Detailed Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Status

Lifecycle StatusActive (Recommended for new designs)

Packaging

PackageTO-247-4
Package Code340CJ

Eco Plan

ComplianceAEC Qualified | PPAP Capable | Pb-free | Halide free

Manufacturer's Classification

  • Wide Bandgap > Silicon Carbide (SiC) MOSFETs