Datasheet MMBF170 - Fairchild MOSFET, N, SOT-23

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, N, SOT-23

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Docket:
April 1995
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 500 mA
• Current Temperature: 25°C
• Device Marking: MMBF170
• Drain Source Voltage Vds: 60 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 5 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 300 mW
• Pulse Current Idm: 800 mA
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: MMBF170
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 2.1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 2.1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V

RoHS: Yes