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Datasheet IPP60R099CP - Infineon MOSFET, N, TO-220

Infineon IPP60R099CP

Part Number: IPP60R099CP

Manufacturer: Infineon

Description: MOSFET, N, TO-220

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Docket:
IPP60R099CP
CoolMOSTM Power Transistor
Features Worldwide best R ds,on in TO220 Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V nC
PG-TO220

Specifications:

  • Continuous Drain Current Id: 31 A
  • Current Id Max: 31 A
  • Drain Source Voltage Vds: 650 V
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On Resistance Rds(on): 99 MOhm
  • Operating Temperature Range: -55C to +150C
  • Package / Case: TO-220
  • Power Dissipation Pd: 255 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-220
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vds Typ: 650 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

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