Datasheet BSO094N03S - Infineon MOSFET, N, 30 V, SO-8
Part Number: BSO094N03S
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N, 30 V, SO-8
Docket:
BSO094N03S
OptiMOS®2 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for notebook DC/DC converters · Qualified according to JEDEC for target applications · N-channel · Logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 30 9.1 13 V m A
Specifications:
- Continuous Drain Current Id: 13 A
- Current Id Max: 10 A
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 9.1 MOhm
- On State Resistance @ Vgs = 4.5V: 12.9 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOIC
- Power Dissipation Pd: 1.56 W
- Pulse Current Idm: 52 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1.6 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vds: 30 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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