Datasheet IRF7663 - International Rectifier MOSFET, P MICRO-8
Part Number: IRF7663
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, P MICRO-8
Docket:
PD-91866A
IRF7663
HEXFET® Power MOSFET
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Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel
Specifications:
- Avalanche Single Pulse Energy Eas: 115mJ
- Capacitance Ciss Typ: 2520 pF
- Charge Qrr @ Tj = 25В°C Typ: 50nC
- Continuous Drain Current Id: 8.2 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 20 V
- External Depth: 5.03 mm
- External Length / Height: 1.11 mm
- External Width: 3.05 mm
- Full Power Rating Temperature: 25°C
- Gfs Min: 14.5A/V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Lead Spacing: 0.65 mm
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 1
- On Resistance Rds(on): 20 MOhm
- On State Resistance Max: 20 MOhm
- Package / Case: Micro8
- Power Dissipation Pd: 1.8 W
- Pulse Current Idm: 66 A
- Reverse Recovery Time trr Typ: 70 ns
- Row Pitch: 4.24 mm
- SMD Marking: 7663
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: MicroSOIC
- Transistor Polarity: P Channel
- Voltage Vds: 20 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Max: -1 V
- Voltage Vgs th Min: -0.6 V
Accessories:
- Roth Elektronik - RE903